VISHAY
晶体管, MOSFET, P沟道, -8.2 A, -12 V, 0.0068 ohm, -1.8 V, -800 mV
ROHM
单晶体管 双极, AEC-Q101, NPN, 30 V, 400 MHz, 200 mW, 1 A, 270 hFE
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1 A, 100 V, 500 mohm, 10 V, 2.6 V
MICRO COMMERCIAL COMPONENTS
肖特基整流二极管, 30V, SOD-323
INFINEON
双路场效应管, MOSFET, 双P沟道, 9.2 A, -12 V, 17 mohm, -4.5 V, -900 mV
晶体管, MOSFET, P沟道, 600 mA, -20 V, 600 mohm, -4.5 V, -1.5 V
MULTICOMP
单晶体管 双极, 达林顿, NPN, 100 V, 40 W, 4 A, 750 hFE
NXP
晶体管, JFET, JFET, -25 V, 40 mA, -2 V, SOT-23
晶体管, MOSFET, P沟道, -7.2 A, -20 V, 25 mohm, -4.5 V, -800 mV
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 30A TO-220AB
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 65 mohm, 10 V, 3 V
晶体管 双极-射频, NPN, 4.7 V, 45 GHz, 160 mW, 45 mA, 160 hFE
齐纳二极管, 1W, 75V, DO-41
标准二极管, 1A, 600V, DO-204AL
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 30 V, 0.085 ohm, 10 V, 1.75 V
NEXPERIA
双极晶体管阵列, PNP, 30 V, 250 mW, -100 mA, 420 hFE, SOT-143
Bipolar (BJT) Single Transistor, PNP, 60 V, 12.5 W, 1.5 A, 25 hFE
单晶体管 双极, NPN, 160 V, 130 MHz, 1 W, 600 mA, 80 hFE
双极晶体管阵列, AEC-Q101, 双PNP, -60 V, 400 mW, -600 mA, 75 hFE, SOT-363
晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
晶体管, MOSFET, N沟道, 6 A, 500 V, 0.76 ohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 3.9 A, 30 V, 0.03 ohm, 10 V, 1.5 V
WEEN SEMICONDUCTOR
三端双向可控硅, 800 V, 7 mA, 2 W, 1.3 V, TO-92, 8.5 A
(EN)
