VISHAY
齐纳二极管, 500mW, 10V, DO-35
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.9 A, 80 V, 0.014 ohm, 10 V, 4 V
ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm, 47 kohm, 0.213 电阻比率
晶体管, MOSFET, N沟道, 18.5 A, 30 V, 0.0038 ohm, 10 V, 1.8 V
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0025 ohm, 10 V, 2 V
DIODES INC.
晶体管, MOSFET, N沟道, 320 mA, 100 V, 4 ohm, 10 V, 2.4 V
晶体管, MOSFET, N沟道, 33 A, 150 V, 0.031 ohm, 10 V, 3 V
MULTICOMP
ZENER DIODE, 500mW, 20V, DO-35
MICRO COMMERCIAL COMPONENTS
双极性晶体管, NPN, 40VDC, SOT-23
双路场效应管, MOSFET, 双N沟道, 280 mA, 60 V, 1.6 ohm, 5 V, 1.76 V
标准恢复二极管, 400 V, 3 A, 单, 1.1 V, 100 A
标准二极管, 3A, 400V, DO-201AD
单晶体管 双极, PNP, -45 V, 310 mW, -500 mA, 250 hFE
MOSFET,N CHANNEL,DIODE,20V,35A,PPAK1212-8
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
TEXAS INSTRUMENTS
双极晶体管阵列, NPN, 50 V, 500 mA, 1000 hFE, DIP
MOSFET, P CHANNEL, -30V, 0.0107OHM, -20A, MLP-8
晶体管, JFET, -30 V, 1.2 mA, 3 mA, -2.2 V, SOT-23, JFET
单管二极管 齐纳, 5.6 V, 500 mW, SOD-123, 5 %, 2 引脚, 150 °C
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V
肖特基整流器, 30 V, 3 A, 单, DO-214AB, 2 引脚, 550 mV
双路场效应管, MOSFET, AEC-Q101, N和P, 870 mA, 20 V, 0.3 ohm, 4.5 V, 1 V
NEXPERIA
二极管, 肖特基, 1A, 40V, SOD-123W-2
晶体管, MOSFET, N沟道, 14 A, 500 V, 400 mohm, 10 V, 4 V
(EN)
