ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.075 ohm, -10 V, -2.6 V
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
MULTICOMP
二极管, 标准恢复, 1A, 200V, DO-214AC-2
TAIWAN SEMICONDUCTOR
肖特基整流器, 90 V, 3 A, 单, DO-201AD, 2 引脚, 850 mV
小信号肖特基二极管, 双系列, 40 V, 200 mA, 1 V, 600 mA, 125 °C
晶体管, MOSFET, P沟道, -6 A, -30 V, 0.033 ohm, -10 V
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 10 kohm, 0.47 电阻比率
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 100 V, 0.044 ohm, 10 V, 4 V
双极晶体管阵列, AEC-Q101, 双PNP, -50 V, 150 mW, -150 mA, 120 hFE, SC-88
MOSFET, N CHANNEL, 30V, 0.0081OHM, 22A, POWER 56-8
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, 双N沟道, 7.6 A, 30 V, 0.022 ohm, 10 V, 1 V
TEXAS INSTRUMENTS
达林顿晶体管阵列, NPN, 7, 50V
快速/超快功率二极管, 800 V, 3 A, 单, 1.7 V, 75 ns, 125 A
INFINEON
场效应管, MOSFET, P沟道, -40V, 10.5A, SOIC
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
场效应管, MOSFET, NP通道, 40V, 10/-9.2A, SOIC-8
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V
单晶体管 双极, NPN, 25 V, 50 MHz, 350 mW, 100 mA, 400 hFE
双路场效应管, MOSFET, 双P沟道, -3.2 A, -60 V, 0.051 ohm, -10 V, -3 V
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
单管二极管 齐纳, 15 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
LITTELFUSE
三端双向可控硅, 600 V, 5 mA, 10 W, 2.5 V, TO-225, 30 A
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)
