NEXPERIA
晶体管, MOSFET, N沟道, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
齐纳二极管, VZ:20V
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -100 V, 120 MHz, 490 mW, -2 A, 50 hFE
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V
单晶体管 双极, NPN, PNP, -60 V, 150 MHz, 480 mW, -1.5 A, 285 hFE
VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
MULTICOMP
肖特基二极管, 3A, 20V, DO-201AD
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
场效应管, MOSFET, N沟道, 3.8W, 8-1212
双路场效应管, MOSFET, 双P沟道, -1.5 A, -30 V, 0.458 ohm, -4 V, -2.6 V
单晶体管 双极, NPN, 80 V, 110 MHz, 700 mW, 5.1 A, 470 hFE
晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V
ROHM
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 2.2 kohm, 2.2 kohm, 1 电阻比率
晶体管, MOSFET, P沟道, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV
标准二极管, 1A, 400V, DO-214AC
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V
晶体管, 单结(UJT), 2 A, 1 μA, 10 mA, TO-18, 3引脚, 125 °C
晶体管, MOSFET, P沟道, -100 A, -30 V, 0.0041 ohm, -10 V, -2.5 V
场效应管, MOSFET, P沟道, -20V, 4.5A, SSOT-6
单晶体管 双极, PNP, -40 V, 100 MHz, 2 W, -3 A, 150 hFE
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
齐纳二极管, Vz:22V
(EN)
