DIODES INC.
单晶体管 双极, NPN, 65 V, 300 MHz, 200 mW, 100 mA, 290 hFE
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB
MULTICOMP
二极管, 超快恢复型, 300mA, 75V, SOT-23-3
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
双极性晶体管, NPN, 40V, SOIC
NTE ELECTRONICS
标准二极管, 3A, 50V, DO-27
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V
双路场效应管, MOSFET, 双P沟道, 3 A, -30 V, 170 mohm, -10 V, -1.8 V
INFINEON
晶体管 双极-射频, NPN, 3.25 V, 57 GHz, 120 mW, 40 mA, 150 hFE
VISHAY
场效应管, MOSFET, P沟道, -60V, 185mA, TO-236
小信号肖特基二极管, 双共阴极, 30 V, 200 mA, 800 mV, 600 mA, 125 °C
二极管, 标准恢复, 3A, 1KV, DO-214AA-2
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V
单晶体管 双极, NPN, 80 V, 100 MHz, 625 mW, 500 mA, 100 hFE
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV
NEXPERIA
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.027 ohm, -4.5 V, -700 mV
N CHANNEL, MOSFET, 30V, 30A, PowerPAK SO
场效应管, P通道, MOSFET, -55V, 11A, IPAKS
LITTELFUSE
晶闸管, 400 V, 200 μA, 1.5 A, TO-92, 3 引脚
ON SEMICONDUCTOR
小信号肖特基二极管, 双共阴极, 50 V, 500 mA, 550 mV, 5 A, 125 °C
场效应管, MOSFET, P沟道, -20V, 3.2A SOT-23
场效应管, P通道, MOSFET, -55V, 31A, D-PAK
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 22 kohm, 22 kohm, 1 电阻比率
(EN)
