DIODES INC.
晶体管, MOSFET, P沟道, 9.9 A, -40 V, 60 mohm, -10 V, -1 V
ON SEMICONDUCTOR
快速/超快二极管, 300 V, 5 A, 单, 1.05 V, 50 ns, 75 A
VISHAY
小信号肖特基二极管, 单, 40 V, 200 mA, 1 V, 600 mA, 125 °C
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
肖特基整流二极管, 1A 30V DO-213AB
PANASONIC ELECTRONIC COMPONENTS
DIODE, FAST RECOVERY, 2A, 40V, SOD-123
晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
单晶体管 双极, NPN, 65 V, 100 MHz, 250 mW, 100 mA, 200 hFE
双极晶体管阵列, AEC-Q101, 双NPN, 45 V, 350 mW, 100 mA, 200 hFE, DFN1010B
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
功率场效应管, MOSFET, N沟道, 200 mA, 800 V, 15.5 ohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
射频晶体管, NPN, 46GHZ, 4.7V, SOT-343
场效应管, MOSFET, P沟道
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V
双路场效应管, MOSFET, 双N沟道, 4.1 A, 20 V, 0.024 ohm, 4.5 V, 1 V
晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
单晶体管 双极, PNP, 300 V, 15 W, -500 mA, 30 hFE
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
晶体管, N沟道, 12A, 20V, 3.5W
(EN)
