STMICROELECTRONICS
Bipolar (BJT) Array Transistor, Darlington, NPN, 50V, 2.25W, 500mA, hFE 1000, PDIP-18
DIODES INC.
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.092 ohm, -4.5 V, -1 V
ON SEMICONDUCTOR
晶体管 双极预偏置/数字, BRT, NPN和PNP执行, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
单晶体管 双极, PNP, -60 V, 40 W, -4 A, 750 hFE
NEXPERIA
单晶体管 双极, NPN, 45 V, 100 MHz, 250 mW, 100 mA, 420 hFE
TAIWAN SEMICONDUCTOR
标准功率二极管, 600 V, 1 A, 单, 1.1 V, 30 A
MULTICOMP
桥式整流器, 单相, 50A, 600V 快接式
晶体管, JFET, -30 V, 1.2 mA, 3 mA, -1.5 V, SOT-883, JFET
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V
INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
双路场效应管, MOSFET, N和P沟道, 2.3 A, 25 V, 100 mohm, 10 V, 3 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET
双路场效应管, MOSFET, N和P沟道, 8 A, 30 V, 0.018 ohm, 10 V, 1.6 V
二极管, 标准恢复, 1A, 800V, DO-214AC-2
VISHAY
肖特基整流器, 5A, 100V, DO-201AD
快速/超快二极管, 200 V, 1 A, 单, 950 mV, 35 ns, 30 A
MICROCHIP
晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V
单晶体管 双极, 通用, PNP, -60 V, 3 MHz, 65 W, -6 A, 30 hFE
场效应管, MOSFET, P沟道, -20V, -1.5A, SOT-363-6
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.0236 ohm, 4.5 V, 810 mV
功率场效应管, MOSFET, N沟道, 2.8 A, 600 V, 2 ohm, 10 V, 4 V
双路场效应管, MOSFET, 双N沟道, 9.4 A, 20 V, 14 mohm, 4.5 V, 1 V
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
快速/超快二极管, 400 V, 1 A, 单, 1.3 V, 35 ns, 30 A
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 1.5 V
(EN)
