VISHAY
标准功率二极管, 800 V, 20 A, 单, 1.1 V, 300 A
INFINEON
晶体管, MOSFET, N沟道, 24 A, 150 V, 95 mohm, 10 V, 5 V
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 500V 5A TO-220
双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 1.2 A, 20 V, 0.16 ohm, 4.5 V, 800 mV
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V
NEXPERIA
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00195 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
快速恢复二极管, 8A, 200V, TO-220B
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 10 V, 2.5 V
单晶体管 双极, NPN, 400 V, 50 MHz, 1 W, 225 mA, 100 hFE
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.33 ohm, 10 V
单晶体管, IGBT, 50 A, 2.5 V, 312 W, 1.2 kV, TO-3P, 3 引脚
单晶体管 双极, PNP, -100 V, 3 MHz, 30 W, -1 A, 15 hFE
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
双路场效应管, MOSFET, 双P沟道, -2.5 A, -60 V, 0.105 ohm, -10 V, -2.6 V
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, TO-220AB, 120 A
场效应管, MOSFET, N沟道, 36W, TO-252
功率场效应管, MOSFET, N沟道, 9.2 A, 600 V, 750 mohm, 10 V, 4 V
单晶体管 双极, NPN, 250 V, 10 MHz, 15 W, 1 A, 10 hFE
双路场效应管, MOSFET, 双N沟道, 1.13 A, 20 V, 0.22 ohm, 4.5 V, 450 mV
晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
晶体管, MOSFET, N沟道, 160 A, 40 V, 4 mohm, 10 V, 3 V
(EN)
