VISHAY
场效应管, MOSFET, N沟道
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 60 V, 20 mohm, 10 V, 4 V
INFINEON
场效应管, MOSFET
NEXPERIA
单晶体管 双极, 双NPN, 30 V, 165 MHz, 2 W, 1 A, 180 hFE
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 18A, D2-PAK
MICROCHIP
晶体管, MOSFET, N沟道, 500 mA, 400 V, 17 ohm, 0 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00096 ohm, 10 V, 1.7 V
晶体管, MOSFET, N沟道, 17 A, 100 V, 105 mohm, 10 V, 2 V
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
双路场效应管, MOSFET, 双N沟道, 1.3 A, 20 V, 0.165 ohm, 4.5 V, 400 mV
ON SEMICONDUCTOR
单晶体管 双极, PNP, -150 V, 300 MHz, 225 mW, -500 mA, 50 hFE
功率场效应管, MOSFET, N沟道, 35 A, 650 V, 0.067 ohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 35.3 A, 40 V, 0.02 ohm, 10 V, 3 V
场效应管, MOSFET, N沟道, 250V, 14A
晶体管, MOSFET, N沟道, 30 A, 200 V, 75 mohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V
功率场效应管, MOSFET, N沟道, 60 A, 650 V, 0.04 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 2.7 A, 40 V, 0.064 ohm, 10 V, 1.6 V
双极晶体管阵列, 双路, NPN, 50 V, 150 mW, 150 mA, 120 hFE, SOT-363
WEEN SEMICONDUCTOR
三端双向可控硅, 600 V, 7 mA, 2 W, 1.3 V, TO-92, 13.8 A
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 550 mohm, 10 V, 4 V
DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)
