ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -340 mA, -60 V, 1.2 ohm, -10 V, -1.9 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -150V, -150A, D2-PAK
NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 5 V, 1.5 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, PNP, -300 V, 50 MHz, 1.5 W, -50 mA, 50 hFE
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
MULTICOMP
单晶体管 双极, NPN, 100 V, 30 MHz, 1 W, 1 A, 150 hFE
单晶体管 双极, NPN, 45 V, 1.5 W, 1.5 A, 40 hFE
双极晶体管
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
晶体管, MOSFET, N沟道, 9.5 A, 200 V, 0.29 ohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
标准功率二极管, 1 kV, 3 A, 单, 1.1 V, 100 A
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0064 ohm, -4.5 V, -500 mV
单晶体管 双极, 达林顿, NPN, 30 V, 170 MHz, 2 W, 1 A, 20000 hFE
单晶体管, IGBT, 30 A, 1.75 V, 117 W, 600 V, TO-220, 3 引脚
晶体管, MOSFET, N沟道, 42 A, 75 V, 26 mohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 900 mA, 100 V, 650 mohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 24 mohm, 4.5 V, 820 mV
单晶体管 双极, NPN, 50 V, 300 MHz, 250 mW, 150 mA, 120 hFE
单晶体管 双极, 达林顿, PNP, 100 V, 2 W, 8 A, 1000 hFE
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC
(EN)
