DIODES INC.
双极晶体管阵列, 双路, PNP, -60 V, 200 mW, -600 mA, 100 hFE, SOT-363
VISHAY
晶体管, MOSFET, N沟道, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V
INFINEON
晶体管, MOSFET, N沟道, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
NEXPERIA
双极晶体管阵列, NPN, 30 V, 250 mW, 100 mA, 100 hFE, SOT-143B
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 530 mohm, 10 V, 4 V
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
场效应管, MOSFET, N沟道
MULTICOMP
快速/超快二极管, 400 V, 2 A, 单, 1.3 V, 35 ns, 50 A
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
场效应管, MOSFET, P沟道, -8V, 13.7A, SOIC
单晶体管 双极, 通用, PNP, 45 V, 200 MHz, 600 mW, 200 mA, 120 hFE
单管二极管 齐纳, 11 V, 300 mW, SOT-23, 5 %, 3 引脚, 150 °C
场效应管, MOSFET, N沟道, 250V, 44A, D2-PAK
晶体管, MOSFET, N沟道, 12 A, 60 V, 9.4 mohm, 10 V, 4.9 V
晶体管, MOSFET, N沟道, 80 A, 75 V, 4.5 mohm, 10 V, 4 V
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V
晶体管, MOSFET, P沟道, -10.5 A, -40 V, 0.015 ohm, -10 V, -3 V
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V
场效应管, MOSFET, N沟道, TO-220AB
晶体管, MOSFET, N沟道, 60 A, 55 V, 11 mohm, 10 V, 1 V
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
单晶体管 双极, NPN, 70 V, 90 W, 15 A, 70 hFE
双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.3 ohm, 4.5 V, 1.2 V
(EN)
