VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.9 V
单晶体管, IGBT, 45 A, 2.77 V, 200 W, 1.2 kV, TO-247AC, 3 引脚
单晶体管, IGBT, 80 A, 3.39 V, 595 W, 1.2 kV, TO-274AA, 3 引脚
场效应管, MOSFET, P沟道, -20V, 13.7A, SOIC
功率场效应管, MOSFET, N沟道, 9 A, 650 V, 0.35 ohm, 10 V, 3 V
单晶体管, IGBT, 通用, 30 A, 2.05 V, 130 W, 600 V, TO-220, 3 引脚
NEXPERIA
单晶体管 双极, NPN, 20 V, 100 MHz, 550 mW, 2 A, 220 hFE
TAIWAN SEMICONDUCTOR
标准恢复二极管, 200 V, 1 A, 单, 1.2 V, 200 ns, 30 A
STMICROELECTRONICS
双向晶闸管, 600V, 16A, TO-220AB
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.028 ohm, -4.5 V
晶体管, MOSFET, N沟道, 83 A, 150 V, 0.0094 ohm, 10 V, 3 V
DIAC, 35V to 45V, DO-35
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
晶体管, MOSFET, N沟道, 80 A, 30 V, 3.5 mohm, 10 V, 1 V
功率场效应管, MOSFET, N沟道, 4.3 A, 800 V, 1.9 ohm, 10 V, 3.75 V
单晶体管 双极, PNP, -60 V, 200 MHz, 625 mW, -600 mA, 50 hFE
NTE ELECTRONICS
小信号双极性晶体管
MULTICOMP
单晶体管 双极, NPN, 80 V, 2.5 MHz, 40 W, 4 A, 100 hFE
LITTELFUSE
晶闸管, 400 V, 40 mA, 16 A, 25 A, TO-220AB, 3 引脚
单晶体管 双极, PNP, -50 V, 100 MHz, 1.5 W, -2 A, 40 hFE
肖特基整流器, 30 V, 5.5 A, 单, TO-252AA, 3 引脚, 460 mV
(EN)
