ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 20.6 A, 600 V, 0.16 ohm, 10 V, 2.5 V
INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
VISHAY
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 600 mohm, 10 V, 4 V
ROHM
二极管 小信号, 双系列, 100 V, 1.25 V, 3 μs, 4 A
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
单晶体管 双极, PNP, -40 V, 250 MHz, 350 mW, -200 mA, 30 hFE
WOLFSPEED
功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V
DIODES INC.
晶体管, MOSFET, P沟道, -4.6 A, -20 V, 0.029 ohm, -4.5 V, 960 mV
晶体管, MOSFET, N沟道, 13 A, 200 V, 235 mohm, 10 V, 5.5 V
NTE ELECTRONICS
标准二极管, 1A, 1.5KV, DO-41
双路场效应管, MOSFET, 双P沟道, 9 A, -20 V, 18 mohm, -4.5 V, -1 V
STMICROELECTRONICS
三端双向可控硅, 600 V, 50 mA, 1 W, 1.5 V, RD-91, 400 A
晶体管, MOSFET, N沟道, 8.5 A, 500 V, 0.4 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 2 V
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
单晶体管, IGBT, 11 A, 1.75 V, 58 W, 600 V, TO-252, 3 引脚
MOSFET, N CHANNEL, 12V, 35A, POWERPAK 1212-8
晶体管, MOSFET, P沟道, -4.7 A, -60 V, 0.1 ohm, -10 V, -3 V
输入二极管, 20A, 1.2KV, TO-220AC
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1.6 V
场效应管, MOSFET, N沟道
ON SEMICONDUCTOR
单晶体管 双极, 音频, NPN, 250 V, 4 MHz, 200 W, 16 A, 75 hFE
(EN)
