IXYS SEMICONDUCTOR
单晶体管, IGBT, 88 A, 2.1 V, 290 W, 1.2 kV, SOT-227B, 4 引脚
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00111 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.48 ohm, 10 V, 3.9 V
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 1.5W, 6.2V, DO-214AC
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 4 V
晶体管, MOSFET, P沟道, 90 A, -60 V, 0.0074 ohm, -10 V, -1 V
齐纳二极管, 68V, 300mW, SOT-23
INFINEON
功率场效应管, MOSFET, N沟道, 18 A, 650 V, 0.11 ohm, 10 V, 3.5 V
单晶体管 双极, 达林顿, NPN, 100 V, 4 MHz, 160 W, 20 A, 18000 hFE
MULTICOMP
二极管, 标准恢复, 2A, 400V, DO-214AA-2
NTE ELECTRONICS
快速二极管, 5A, 1KV, DO-27
单晶体管 双极, 达林顿, NPN, 45 V, 200 MHz, 1.3 W, 1 A, 2000 hFE
TEXAS INSTRUMENTS
单晶体管 双极, 双N沟道, 30 V, 6.7 ohm, 4.5 V, 750 mV
晶体管, MOSFET, N沟道, 59 A, 100 V, 14 mohm, 10 V, 2 V
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10 A, 800 V, 0.93 ohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 77.5 A, 600 V, 0.037 ohm, 10 V, 3 V
功率晶体管
单晶体管 双极, 达林顿, NPN, 100 V, 80 W, 8 A, 200 hFE
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.161 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 79 A, 60 V, 0.0071 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 9.7A, TO-220AB
单晶体管 双极, AEC-Q101, PNP, -40 V, 160 MHz, 2 W, -3 A, 100 hFE
STMICROELECTRONICS
单晶体管 双极, NPN, 60 V, 50 W, 10 A, 60 hFE
单晶体管, IGBT, 25 A, 2.2 V, 190 W, 1.2 kV, TO-247, 3 引脚
晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
