NEXPERIA
单晶体管 双极, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
DIODES INC.
单晶体管 双极, PNP, -30 V, 200 MHz, 300 mW, -100 mA, 600 hFE
LITTELFUSE
三端双向可控硅, 800 V, 8 A, TO-220AB, 35 mA, 1.7 V, 20 W
ROHM
双路场效应管, MOSFET, N和P沟道, 200 mA, 20 V, 0.7 ohm, 4 V, 1 V
INFINEON
功率场效应管, MOSFET, N沟道, 13.1 A, 600 V, 0.41 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管, IGBT, 160 A, 1.7 V, 454 W, 1.2 kV, TO-247, 3 引脚
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.4 ohm, 10 V, 2.5 V
晶体管, MOSFET, N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 98 mohm, 4.5 V, 1.5 V
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 130 mohm, 4.5 V
STMICROELECTRONICS
晶闸管, 600 V, 200 μA, 8 A, 12 A, TO-252, 3 引脚
晶体管 双极预偏置/数字, 双路NPN, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
单晶体管 双极, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
双路场效应管, MOSFET, 双N沟道, 1.5 A, 30 V, 340 mohm, 4.5 V, 1.5 V
齐纳二极管, 5W, 3.6V, 017AA
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
晶体管, MOSFET, HEXFET, N沟道, 140 A, 100 V, 0.0056 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23
MULTICOMP
标准恢复二极管, 400 V, 2 A, 单, 1.1 V, 60 A
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.0068 ohm, 10 V, 2 V
WOLFSPEED
功率场效应管, MOSFET, N沟道, 35 A, 900 V, 0.065 ohm, 15 V, 2.1 V
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.012 ohm, 10 V, 1.6 V
晶体管, MOSFET, N沟道, 280 A, 40 V, 2.3 mohm, 10 V, 4 V
标准恢复二极管, 400 V, 3 A, 单, 1.1 V, 100 A
VISHAY
标准恢复功率整流器
(EN)
