DIODES INC.
单晶体管 双极, NPN, 20 V, 140 MHz, 1 W, 3.5 A, 450 hFE
MULTICOMP
标准功率二极管, 600 V, 3 A, 单, 1.1 V, 100 A
STMICROELECTRONICS
三端双向可控硅, 600 V, 35 mA, 1 W, 1.3 V, TO-263, 120 A
INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 105 mohm, 10 V, 2 V
RENESAS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.173 ohm, 4.5 V
标准恢复二极管, 200 V, 3 A, 单, 1.1 V, 100 A
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 61 A, 200 V, 0.034 ohm, 10 V, 5 V
ON SEMICONDUCTOR
单晶体管 双极, NPN, 30 V, 100 MHz, 710 mW, 1 A, 200 hFE
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 56 A, 100 V, 0.014 ohm, 10 V, 1.7 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
NTE ELECTRONICS
整流桥
标准恢复二极管, 400 V, 1 A, 单, 1.3 V, 150 ns, 30 A
ROHM
单晶体管 双极, NPN, 50 V, 180 MHz, 150 mW, 150 mA, 180 hFE
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 13A, D-PAK
双极晶体管阵列, BISS 负载开关, NPN, PNP, 40 V, 200 mW, -500 mA, 200 hFE, SOT-363
VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
单晶体管 双极, NPN, 100 V, 125 W, 10 A, 500 hFE
AMERICAN POWER DEVICES
整流二极管, 600mW, 2.25V, DO-35
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0013 ohm, 10 V, 3 V
双路场效应管, MOSFET, 双P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -1.7 V
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V
功率场效应管, MOSFET, N沟道, 36 A, 900 V, 0.1 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 17.5 A, 60 V, 14 mohm, 10 V, 1 V
单晶体管 双极, PNP, -65 V, 150 MHz, 310 mW, -100 mA, 420 hFE
(EN)
