STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 600 V, 0.48 ohm, 10 V, 3.75 V
三端双向可控硅, 800 V, TO-252, 80 A
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -7.8 A, -20 V, 0.019 ohm, -5 V, -500 mV
晶体管, MOSFET, N沟道, 7 A, 20 V, 0.019 ohm, 4.5 V, 700 mV
LITTELFUSE
三端双向可控硅, 600 V, 25 A, TO-3, 50 mA, 1.3 V, 20 W
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.53 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
晶闸管, 400 V, 30 mA, 7.5 A, 12 A, TO-220AB, 3 引脚
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 5.8 mohm, 10 V, 2 V
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
智能功率模块 (IPM), IGBT, 600 V, 30 A, 2 kV, DIP, CIPOS
场效应管, MOSFET, N沟道, 60V, 12A TO-252AA
NEXPERIA
单晶体管 双极, NPN, 50 V, 550 mW, 3 A, 300 hFE
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.039 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 50 A, 250 V, 0.0363 ohm, 10 V, 4 V
场效应管, MOSFET, N沟道, 900V, 8A, TO-220
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.002 ohm, 10 V, 2.8 V
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 48 mohm, -10 V, -1.8 V
单晶体管 双极, 通用, NPN, 32 V, 250 MHz, 250 mW, 100 mA, 180 hFE
晶体管, MOSFET, P沟道, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV
MULTICOMP
单管二极管 齐纳, 15 V, 500 mW, SOD-80C, 5 %, 2 引脚, 200 °C
功率场效应管, MOSFET, N沟道, 4.6 A, 650 V, 950 mohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0106 ohm, 10 V, 3 V
VISHAY
晶体管, MOSFET, N沟道, 9.8 A, 200 V, 180 mohm, 10 V, 4 V
三端双向可控硅, 800 V, 35 mA, 16 W, 1.5 V, TO-220AB, 80 A
(EN)
