VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
NEXPERIA
双极晶体管阵列, NPN, PNP, 60 V, 2.3 W, 6.7 A, 300 hFE, SOIC
MICRO COMMERCIAL COMPONENTS
标准恢复, 1A, 1KV, DO-41
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
单晶体管, IGBT, 20 A, 2.4 V, 170 W, 600 V, TO-220, 3 引脚
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
晶体管, JFET, JFET, 40 V, -4 mA, -16 mA, 9 V, SOT-23, JFET
NTE ELECTRONICS
功率晶体管, NPN, 70V, TO-220
标准二极管, 3A, 200V, DO-27
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
功率场效应管, MOSFET, N沟道, 6 A, 800 V, 0.78 ohm, 10 V, 3 V
MULTICOMP
单晶体管 双极, PNP, -45 V, 200 MHz, 300 mW, -500 mA, 160 hFE
ON SEMICONDUCTOR
双向晶闸管, 600V, 8A, TO-220AB
SOLID STATE
整流二极管, 标准恢复型, 800V, DO-5
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.0096 ohm, 10 V, 3 V
场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK
单晶体管, IGBT, 80 A, 1.55 V, 429 W, 1.2 kV, TO-247, 3 引脚
晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V
STMICROELECTRONICS
Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 62 nC, TO-220AC
单晶体管 双极, NPN, 400 V, 3 MHz, 175 W, 15 A, 8 hFE
三端双向可控硅, 600 V, 25 mA, 1 W, 1.3 V, TO-220AB, 80 A
单晶体管, IGBT, 40 A, 1.45 V, 64 W, 600 V, TO-3PF, 3 引脚
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
(EN)
