TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 12 V, 1 W, DO-41 (DO-204AL), 5 %, 2 引脚, 150 °C
ALLEGRO SANKEN
单晶体管 双极, NPN, 160 V, 50 MHz, 130 W, 15 A, 50 hFE
LITTELFUSE
晶闸管, 600 V, 35 mA, 16 A, TO-220AB, 3 引脚
ON SEMICONDUCTOR/FAIRCHILD
单晶体管 双极, NPN, 200 V, 10 MHz, 60 W, 7 A
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 500 mA, 60 V, 1.3 ohm, 10 V, 2.5 V
INFINEON
单晶体管, IGBT, 40 A, 2.3 V, 270 W, 1.2 kV, TO-247, 3 引脚
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V
NEXPERIA
晶体管, MOSFET, N沟道, 42 A, 100 V, 21.4 mohm, 10 V, 3 V
ROHM
晶体管, MOSFET, P沟道, -39 A, -30 V, 0.0061 ohm, -10 V, -2.5 V
VISHAY
超快速功率整流器
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.6 V, 500 W, 600 V, ISOTOP
晶体管, MOSFET, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
MULTICOMP
单晶体管 双极, NPN, 100 V, 75 W, 8 A, 20000 hFE
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V
功率场效应管, MOSFET, N沟道, 36 A, 600 V, 0.081 ohm, 10 V, 2 V
单晶体管 双极, NPN, 30 V, 180 MHz, 2.5 W, 5 A, 450 hFE
功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V
肖特基整流器, 150 V, 40 A, 双共阴极, TO-263, 3 引脚, 920 mV
RENESAS
单晶体管, IGBT, 50 A, 1.7 V, 201.6 W, 600 V, TO-247, 3 引脚
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 0.005 ohm, 10 V, 1 V
单晶体管 双极, NPN, 40 V, 300 MHz, 200 mW, 200 mA, 100 hFE
单晶体管, IGBT, 通用, 40 A, 1200 V, 348 W, 1.2 kV, TO-3PN, 3 引脚
二极管 小信号, 单, 35 V, 100 mA, 1 V
单晶体管 双极, PNP, -30 V, 430 MHz, 500 mW, -2 A, 200 hFE
单晶体管 双极, PNP, 20 V, 100 MHz, 600 mW, 2 A, 250 hFE
(EN)
