ROHM
双路场效应管, MOSFET, 双P沟道, -200 mA, -30 V, 0.9 ohm, -10 V, -2.5 V
VISHAY
整流桥
MULTICOMP
单晶体管 双极, PNP, -45 V, 2.5 MHz, 40 W, 4 A, 100 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
ALLEGRO SANKEN
单晶体管 双极, NPN, 230 V, 60 MHz, 130 W, 15 A, 50 hFE
INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
晶体管, MOSFET, 通用, N沟道, 49 A, 55 V, 20 mohm, 10 V, 4 V
ON SEMICONDUCTOR
双极晶体管
NTE ELECTRONICS
双极性晶体管
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.044 ohm, -4.5 V, -1 V
晶体管, MOSFET, P沟道, -4.5 A, -45 V, 0.11 ohm, -10 V, -3 V
STMICROELECTRONICS
单晶体管 双极, NPN, 400 V, 100 W, 12 A, 10 hFE
单晶体管 双极, PNP, -230 V, 30 MHz, 200 W, -15 A, 12 hFE
双路场效应管, MOSFET, N和P沟道, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V
Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 62 nC, DO-247
二极管模块, 600 V, 120 A, 1.55 V, 双路隔离
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
晶体管, MOSFET, N沟道, 62 A, 33 V, 12.5 mohm, 10 V, 4 V
单晶体管 双极, NPN, 60 V, 300 MHz, 200 mW, 500 mA, 120 hFE
单晶体管 双极, 高速, NPN, 50 V, 250 MHz, 200 mW, 150 mA, 820 hFE
单晶体管 双极, PNP, -45 V, 100 MHz, 200 mW, -100 mA, 420 hFE
场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3
晶体管 双极预偏置/数字, BRT, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
(EN)
