TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道
INFINEON
晶体管, MOSFET, N沟道, 82 A, 75 V, 13 mohm, 10 V, 4 V
双路场效应管, MOSFET, 双P沟道, 2.3 A, -30 V, 250 mohm, -10 V, -1 V
VISHAY
功率场效应管, MOSFET, N沟道, 5.5 A, 600 V, 750 mohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 61 A, 55 V, 14 mohm, 10 V, 3 V
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 132 A, 500 V, 0.039 ohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 3 A, 1.2 kV, 4.5 ohm, 10 V, 5 V
ON SEMICONDUCTOR
晶闸管, SCR, 8A, 100V, TO-220
单晶体管, IGBT, 60 A, 1.9 V, 189 W, 600 V, TO-247, 3 引脚
单晶体管, IGBT, 80 A, 2 V, 417 W, 600 V, TO-247, 3 引脚
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 40 V, 0.0346 ohm, 10 V, 2.5 V
肖特基整流器, 30 V, 100 mA, 单, SOD-523, 2 引脚, 450 mV
肖特基整流器, 40 V, 200 mA, 单, SOD-323FL, 2 引脚, 390 mV
功率场效应管, MOSFET, N沟道, 29 A, 650 V, 0.12 ohm, 18 V, 4 V
STMICROELECTRONICS
Power MOSFET, N Channel, 34 A, 600 V, 0.085 ohm, 10 V, 4 V
快速二极管, 1A, 800V, DO-204AL
二极管阵列 齐纳, 6.8 V, 200 mW, 150 °C, SOT-323
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0137 ohm, 10 V, 2.8 V
单晶体管, IGBT, 40 A, 2.5 V, 160 W, 600 V, TO-247AC, 3 引脚
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
AMERICAN POWER DEVICES
齐纳二极管, 500mW, 12.28V, DO-35
(EN)
