ROHM
单晶体管, IGBT, 场截止沟道, 70 A, 1.65 V, 234 W, 650 V, TO-247N, 3 引脚
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 650 mohm, 10 V, 3.75 V
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
TOSHIBA
单晶体管 双极, 音频, PNP, -230 V, 30 MHz, 150 W, -15 A, 160 hFE
VISHAY
二极管模块, 200 V, 40 A, 1.3 V, 单路
CRYDOM
整流桥模块
晶闸管, 1200 V, 80 mA, 32 A, 50 A, TOP-3, 3 引脚
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V
三端双向可控硅, 800 V, 10 mA, 10 W, 1.1 V, TO-220FPAB, 20 A
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.2 A, -60 V, 170 mohm, -10 V, -1.6 V
FUJI ELECTRIC
单晶体管, IGBT, 95 A, 1.5 V, 360 W, 600 V, TO-247, 3 引脚
LITTELFUSE
三端双向可控硅, 600 V, 10 mA, 400 mW, 1.3 V, TO-220AB, 65 A
NTE ELECTRONICS
双极性晶体管, PNP, -160V
双极性晶体管, NPN, 80V TO-220
NEXPERIA
单晶体管 双极, PNP, -60 V, 90 MHz, 2.1 W, -5 A, 265 hFE
单晶体管 双极, 开关, PNP, -60 V, 200 MHz, 200 mW, -600 mA, 100 hFE
单晶体管, IGBT, 场截止沟道, 58 A, 1.6 V, 194 W, 650 V, TO-247N, 3 引脚
晶体管, N沟道
晶体管, MOSFET, N沟道, 80 A, 120 V, 13 mohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
SOLID STATE
晶体管, 双极性晶体管, NPN, 100V, 5A, TO-220-3
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0028 ohm, 20 V, 4 V
单晶体管, IGBT, 96 A, 1.65 V, 330 W, 600 V, TO-247AD, 3 引脚
(EN)
