ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 1.7 V, 366 W, 600 V, TO-247, 3 引脚
NTE ELECTRONICS
双极性晶体管, NPN, 24V
达林顿双极性晶体管
整流桥
ROHM
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
肖特基整流器, 45 V, 200 mA, 单, SOD-523, 2 引脚, 540 mV
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 6 A, 500 V, 340 mohm, 10 V, 3.75 V
单晶体管 双极, AEC-Q101, PNP, -50 V, 320 MHz, 2 W, -2 A, 180 hFE
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V
INFINEON
单晶体管, IGBT, 通用, 16 A, 2.2 V, 70 W, 1.2 kV, TO-247, 3 引脚
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, 4 V
晶体管, MOSFET, N沟道, 9.1 A, 200 V, 80 mohm, 10 V, 4.9 V
VISHAY
晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V
IXYS SEMICONDUCTOR
单晶体管, IGBT, 33 A, 2.1 V, 130 W, 1.2 kV, TO-220AB, 3 引脚
Silicon Carbide IGBT Single Transistor, 40 A, 2.5 V, 180 W, 1.2 kV, TO-247AD, 3 Pins
晶体管, PNP, 1A, TO-1
肖特基整流器, 40 V, 100 mA, 单, SOD-523, 2 引脚, 480 mV
单晶体管, IGBT, 场截止沟道, 16 A, 1.65 V, 94 W, 650 V, TO-263S, 3 引脚
Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V
TOSHIBA
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.065 ohm, 10 V, 3 V
DIODES INC.
晶体管, MOSFET, P沟道, 3.7 A, -70 V, 160 mohm, 10 V, -1 V
双向晶闸管, 20A
SOLID STATE
硅整流二极管, DO4, 12A
(EN)
