NEXPERIA
单晶体管 双极, NPN, 350 V, 70 MHz, 1.3 W, 100 mA, 40 hFE
MULTICOMP
齐纳二极管, 3V, 200mW, SOT-323
PANASONIC ELECTRONIC COMPONENTS
二极管, 超快恢复型, 200mA, 30V, SMINI2-F5-B
MICROCHIP
芯片, 场效应管, MOSFET, 耗尽模式, 350V, 35Ω, 3-SOT-23, T/R
齐纳二极管, 200mW, 16V, SMINI2-F5-B
ON SEMICONDUCTOR/FAIRCHILD
二极管, 1A, DO-214AC, 整卷
VISHAY
快速二极管, 1A, 200V, DO-214AC
MICRO COMMERCIAL COMPONENTS
二极管, 超快恢复型, 1A, 200V, DO-214AC, 整卷
整流器, 超快恢复, 1A, DO-214AC
二极管, 快速恢复型, 3A, 100V, DO-214AB-2
二极管, 3A, DO-214AB, 整卷
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
场效应管, MOSFET, P沟道, -20V, 2.3A, SuperSOT整卷
双路场效应管, MOSFET, N和P沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 20 mohm, 10 V, 2 V
场效应管, MOSFET, P沟道, -12V, -700mA, SC-70, 整卷
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
双路场效应管, MOSFET, N和P沟道, 9.3 A, 30 V, 14 mohm, 10 V, 1.6 V
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
场效应管, MOSFET, P沟道, -20V, -3.5A, SOIC-8, 整卷
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 74 mohm, 10 V, 2.5 V
晶体管, IGBT/场效应管, MOSFET, IPM, 231W, 39A, 620V
晶体管, MOSFET, P沟道, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)
