ROHM
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 10 kohm
晶体管 双极预偏置/数字, 单路PNP, -50 V, -500 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 120V, 0.0096OHM, 35A, POWER 56-8
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2 A, -12 V, 0.152 ohm, -4.5 V, -900 mV
晶体管, MOSFET, P沟道, -1.5 A, -20 V, 0.205 ohm, -4.5 V, -1.4 V
肖特基整流器, 30 V, 1 A, 单, DO-216AA, 2 引脚, 520 mV
双极晶体管阵列, 双NPN, 60 V, 2.27 W, 1 A, 35 hFE, WDFN
NXP
晶体管, NPN, 60V, 3A, SOT-669-5
肖特基整流器, 90 V, 200 mA, 单, SOT-23, 3 引脚, 700 mV
晶体管 双极预偏置/数字, 双路 NPN, 50 V, 100 mA, 2.2 kohm, 47 kohm, 0.047 电阻比率
MULTICOMP
肖特基整流器, 20 V, 3 A, 单, DO-214AB, 2 引脚, 550 mV
VISHAY
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 1 kohm, 10 kohm, 0.1 电阻比率
NEXPERIA
晶体管, MOSFET, 沟槽式, P沟道, -3.7 A, -20 V, 0.05 ohm, -4.5 V, -650 mV
晶体管, P沟道
双路场效应管, MOSFET, AEC-Q101, 双PNP
INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V
场效应管, MOSFET, N沟道 通道, 25V, 60A, PQFN-30
PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 500mA, 25V, SMINI2-F5-B
齐纳二极管, 4.7V, 200mW, SOD-323
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
场效应管, MOSFET, P沟道, -4.1A, -12V, 750mW
晶体管, BISS, NPN, 60V, 3A, 6-SOT-457
晶体管, MOSFET, N沟道, 49 A, 25 V, 0.00095 ohm, 10 V, 1.6 V
(EN)
