VISHAY
晶体管, MOSFET, P沟道, -2.7 A, -12 V, 0.07 ohm, -1.8 V, -450 mV
MICRO COMMERCIAL COMPONENTS
双极性晶体管, PNP, 150VDC, SOT-23
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 0.026Ω, 5.8A, SUPERSOT-6
Transistor Polarity:P Channel
INFINEON
晶体管 双极-射频, NPN, 4.5 V, 30 GHz, 250 mW, 80 mA, 50 hFE
ON SEMICONDUCTOR
单晶体管, IGBT, 9 A, 1.7 V, 49 W, 600 V, TO-252, 3 引脚
MOSFET, P CHANNEL, -20V, -25A, POWERPAK-8
快速恢复二极管, 2A, 100V, DO-41
齐纳二极管, 1.3W, 100V, DO-41
超快速二极管, 4A, 800V, 轴向引线
DIODE, ZENER, 200mW, 4.7V, SOD-323F
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
晶体管, P沟道
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
双路场效应管, MOSFET, 双N沟道, 3.1 A, 30 V, 0.044 ohm, 10 V, 1 V
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
INTERNATIONAL RECTIFIER
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
NXP
射频宽带晶体管, NPN, 4.5V, 17GHZ, 4-SOT-343R
TRANSISTOR, NPN, DUAL, 45V, 200mA, SC-70
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.095 ohm, 10 V, 4 V
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.025 ohm, 4.5 V, 670 mV
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
