VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2 V
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV
MULTICOMP
齐纳二极管, 500mW, 27V, SOD-123
MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, SuperSOT-6
场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
ON SEMICONDUCTOR
达林顿晶体管, PNP, -60V, TO-225
MOSFET, N CHANNEL, 200V, 960mA, SOT-223-4
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V
NEXPERIA
单晶体管 双极, PNP, -50 V, 200 MHz, 250 mW, -200 mA, 210 hFE
MOSFET, N CHANNEL, 30V, 0.0029OHM, 42A, POWER 56-8
INTERNATIONAL RECTIFIER
场效应管, 双MOSFET, 双P沟道
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.0015 ohm, 10 V, 2.3 V
MOSFET, P CHANNEL, -30V, 0.105OHM, -3.4A, SOIC-8
晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V
晶体管, MOSFET, 沟槽式, P沟道, -5.2 A, -20 V, 0.03 ohm, -4.5 V, -680 mV
二极管, 超快恢复型, 100mA, 30V, SOT-363
双路场效应管, MOSFET, 双N沟道, 14.8 A, 30 V, 0.0043 ohm, 10 V, 2.2 V
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
晶体管, MOSFET, N沟道, 16.4 A, 30 V, 0.0046 mohm, 10 V, 2.1 V
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
晶体管, MOSFET, N沟道, 300 A, 40 V, 0.00076 ohm, 10 V, 3.5 V
(EN)
