ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 500V, 0.65OHM, 9A, TO-263-3
PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 1A, 30V, SOT-23
INFINEON
MOSFET, N-CH, 75V, 197A, TO-263CB-7
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 10A, D-PAK
VISHAY
MOSFET, N CHANNEL, 80V, 40A, TO-252-3
MOSFET, N CHANNEL, 600V, 12A, TO-220-3
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC
ON SEMICONDUCTOR
RF TRANSISTOR, NPN, 30V, 100MHZ, SOT-323
快速开关二极管, 3A 200V DO-214AB
双路场效应管, MOSFET, N和P沟道, 4.5 A, 12 V, 0.033 ohm, 4.5 V, 400 mV
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 40 V, 0.0178 ohm, 10 V, 3 V
场效应管, MOSFET, N沟道, 40V, 120A, TO-220AB-3
晶体管 双极预偏置/数字, AEC-Q101, 双路 NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
单晶体管 双极, PNP, -60 V, 110 MHz, 1.35 W, -6 A, 20 hFE
场效应管, MOSFET, N沟道, 600V, 12A, TO-263-3
NXP
射频宽带晶体管, NPN, 5V, 5GHZ, 3-SOT-23
场效应管阵列, MOSFET, 双P沟道, -30V, -2.3A, 6-PQFN
标准二极管, 1A, 800V, 59-10
ROHM
晶体管 双极预偏置/数字, PNP, 双路 PNP, -50 V, -100 mA, 10 kohm
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.27 ohm, 10 V, 4 V
开关二极管, 1.5A 400V DO-214AA
(EN)
