VISHAY
齐纳二极管, VZ:6V
INFINEON
单晶体管, IGBT, N通道, 11.5 A, 3.01 V, 34 W, 600 V, TO-220FP, 3 引脚
晶体管, MOSFET, N沟道, 69 A, 100 V, 0.0099 ohm, 10 V, 1.84 V
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V
双极晶体管阵列, NPN, PNP, 20 V, 2.3 W, 7.5 A, 300 hFE, SOIC
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
肖特基整流二极管
ON SEMICONDUCTOR
达林顿双极晶体管
TAIWAN SEMICONDUCTOR
快速/超快二极管, 150 V, 3 A, 单, 950 mV, 35 ns, 100 A
MULTICOMP
齐纳二极管, 8.2V, 500mW, SOD-123
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 120A, D2PAK
二极管模块, 1 kV, 35 A, 1.8 V, 单路
场效应管, MOSFET, P沟道, -200V, 3.8A, SOIC
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 3.7A, MICROFET 2X2
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 43A, TO-220AB
场效应管, P通道, MOSFET, -55V, 18A, D-PAK
单晶体管, IGBT, 40 A, 1.65 V, 255 W, 650 V, TO-220, 3 引脚
单晶体管 双极, NPN, 60 V, 180 MHz, 1.35 W, 6 A, 40 hFE
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
场效应管, N 通道, MOSFET, 30V, 116A, TO-220AB
ROHM
单晶体管 双极, PNP, -50 V, 140 MHz, 150 mW, -150 mA, 120 hFE
单晶体管 双极, PNP, -30 V, 320 MHz, 200 mW, -1 A, 270 hFE
单晶体管 双极, PNP, -12 V, 280 MHz, 500 mW, -3 A, 270 hFE
单晶体管 双极, 达林顿, NPN, 30 V, 200 MHz, 200 mW, 300 mA, 10000 hFE
(EN)
