INFINEON
单晶体管, IGBT, 50 A, 1.65 V, 305 W, 650 V, TO-247, 3 引脚
场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 60A, D2-PAK
ROHM
二极管 小信号, 双共阳极, 80 V, 100 mA, 1.2 V, 4 ns, 4 A
POWEREX
整流器模块, 100A, 800V, POW-R-BLOK
肖特基整流器, 40 V, 30 mA, 双共阴极, SOT-323, 3 引脚, 370 mV
VISHAY
双路场效应管, MOSFET, 双N沟道, 5 A, 40 V, 0.048 ohm, 10 V, 2.2 V
INTERNATIONAL RECTIFIER
场效应管, MOSFET
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 80 A, 600 V, 0.077 ohm, 10 V, 5 V
MICRO COMMERCIAL COMPONENTS
齐纳二极管, 300mW, 5.1V, SOT-23
MULTICOMP
齐纳二极管, 500mW, 3.9V, DO-35
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
双路场效应管, MOSFET, 双P沟道, 200 mA, -20 V, 0.8 ohm, -4.5 V, -1 V
双路场效应管, MOSFET, 双N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
单晶体管 双极, NPN, 80 V, 100 MHz, 200 mW, 100 mA, 100 hFE
NEXPERIA
双极晶体管阵列, 通用, NPN, PNP, 40 V, 200 mW, 100 mA, 120 hFE, SOT-666
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.022 ohm, 10 V, 2.5 V
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.57 ohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.73 ohm, 10 V, 4 V
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 4 V
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.39 ohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.26 ohm, 10 V, 4 V
(EN)
