VISHAY
场效应管, N通道, MOSFET, 600V, 16A, TO-247
ROHM
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.092 ohm, 10 V, 4 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.077OHM, 12A, TO-252AA-3
SOLID STATE
标准二极管, 25A, 400V, DO-4
INFINEON
单晶体管, IGBT, N通道, 21 A, 1.7 V, 100 W, 650 V, TO-220AB, 3 引脚
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.55 ohm, 10 V, 5 V
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.3 V
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0022 ohm, 4.5 V, 1.3 V
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0028 ohm, 10 V, 1.3 V
晶体管, MOSFET, N沟道, 48 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
功率场效应管, MOSFET, N沟道, 110 A, 600 V, 0.056 ohm, 10 V, 5 V
ON SEMICONDUCTOR
单晶体管, IGBT, 80 A, 2 V, 260 W, 1.2 kV, TO-247, 3 引脚
TAIWAN SEMICONDUCTOR
单管二极管 齐纳, 56 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V
单晶体管 双极, PNP, 32 V, 100 MHz, 1 W, 2 A, 82 hFE
晶体管, P沟道
场效应管, MOSFET, N沟道, 600V, 33A, TO-247AC-3
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)
