NEXPERIA
单晶体管 双极, NPN, 60 V, 180 MHz, 1.65 W, 1 A, 40 hFE
ON SEMICONDUCTOR/FAIRCHILD
双极晶体管阵列, NPN, 45 V, 300 mW, 200 mA, 110 hFE, SC-70
NXP
晶体管, JFET, JFET, 1 mA, 5 mA, -2.5 V, SOT-23, JFET
INFINEON
场效应管, MOSFET, N沟道, 30V, 2.3A, SOT-23-3
场效应管, MOSFET, 双 N+P 30V
ON SEMICONDUCTOR
晶闸管
Dual MOSFET, Dual P Channel, -2.9 A, -20 V, 64 mohm, -4.5 V, -1.5 V
MOSFET Transistor, N Channel, 11 A, 60 V, 0.0101 ohm, 10 V, 2.3 V
肖特基二极管, 50A, 60V, SOD-128
二极管 小信号, 单, 100 V, 1.25 V, 6 ns, 500 mA
单晶体管 双极, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 40 hFE
单晶体管 双极, PNP, -45 V, 100 MHz, 150 mW, -100 mA, 220 hFE
VISHAY
场效应管, MOSFET, P沟道, -60V, -1.6A, SOT-23-3
晶体管, MOSFET, N沟道, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
晶体管, MOSFET, P沟道, 50 A, -20 V, 0.0025 ohm, -10 V, -600 mV
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 47 kohm, 0.21 电阻比率
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.19 ohm, 10 V, 2.5 V
Bipolar (BJT) Single Transistor, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
晶体管, MOSFET, N沟道, 140 mA, 20 V, 5 ohm, 4.5 V, 700 mV
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.19 ohm, -10 V, -2.6 V
LITTELFUSE
三端双向可控硅, 600 V, 5 mA, 1 W, 1.3 V, SOT-223, 8 A
MOSFET Transistor, P Channel, -2.5 A, -60 V, 72 mohm, -10 V, -3 V
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV
晶闸管, 600 V, 200 μA, 0.8 A, 800 mA, SOT-223, 4 引脚
(EN)
