INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 1.6 ohm, 5 V, 600 mV
MULTICOMP
齐纳二极管, 15V, 200mW, SOD-323
DIODES INC.
晶体管 双极预偏置/数字, 单路PNP, -50 V, -100 mA, 47 kohm, 47 kohm, 1 电阻比率
晶体管 双极预偏置/数字, 单路NPN, 50 V, 100 mA, 10 kohm, 10 kohm, 1 电阻比率
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.075 ohm, 10 V, 2 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -65 V, 100 MHz, 150 mW, -100 mA, 150 hFE
NEXPERIA
晶体管, MOSFET, N沟道, 62 A, 80 V, 0.0113 ohm, 10 V, 1.7 V
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.092 ohm, 10 V
双路场效应管, MOSFET, AEC-Q101, 双N沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 1 V
晶体管, MOSFET, N沟道, 11.7 A, 20 V, 0.0065 ohm, 4.5 V, 1 V
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
晶体管, MOSFET, N沟道, 4.6 A, 20 V, 0.027 ohm, 10 V, 600 mV
晶体管, MOSFET, N沟道, 300 mA, 50 V, 2 ohm, 5 V, 1 V
双路场效应管, MOSFET, 双N沟道, 180 mA, 60 V, 6 ohm, 10 V, 2 V
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.02 ohm, -4.5 V, -1 V
晶体管, MOSFET, P沟道, -50 A, -30 V, 0.0057 ohm, -10 V, -3 V
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.0043 ohm, -10 V, -3 V
晶体管, MOSFET, P沟道, -3.3 A, -40 V, 0.026 ohm, -10 V, -2.2 V
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V
单晶体管 双极, PNP, -60 V, 75 MHz, 500 mW, -2 A, 40 hFE
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
双向晶闸管, 600V, 800mA, SOT-223
晶体管, MOSFET, N沟道, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
齐纳二极管, 3.3V, 350mW, SOT-23
(EN)
