DIODES INC.
单晶体管 双极, PNP, -150 V, 300 MHz, 200 mW, -200 mA, 60 hFE
MULTICOMP
齐纳二极管, 7.5V, 500mW, SOD-123
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
双路场效应管, MOSFET, N和P沟道, 630 mA, 20 V, 0.29 ohm, 4.5 V, 1.5 V
晶体管, MOSFET, N沟道+肖特基, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 0.072 ohm, -10 V, -3 V
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 5.3 A, 20 V, 0.032 ohm, 4.5 V, 650 mV
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00093 ohm, 10 V, 1.7 V
晶体管, MOSFET, N沟道, 67 A, 30 V, 0.00605 ohm, 10 V, 1.75 V
VISHAY
整流器, 4A, 600V, SMPC
肖特基整流器, 100 V, 2 A, 单, SOD-123F, 2 引脚, 830 mV
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.072 ohm, -1.5 V, 400 mV
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
MOSFET, P CHANNEL, -12V, -7.1A, TO-236-3
MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
双路场效应管, MOSFET, 双P沟道, -6 A, -30 V, 0.045 ohm, -10 V, -1.2 V
场效应管, MOSFET, P沟道, -60V, -8.6A, POWERPAK SO-8
晶体管, MOSFET, P沟道, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV
晶体管, MOSFET, P沟道, -9 A, -8 V, 0.028 ohm, -4.5 V, -350 mV
MOSFET, N CHANNEL, 40V, 50A, POWERPAK SO-8
二极管, 肖特基, 8A, 100V, TO-277A-3
双路场效应管, MOSFET, N和P, 3 A, 60 V, 0.062 ohm, 10 V, 2.6 V
晶体管, MOSFET, P沟道, 4 A, -30 V, 70 mohm, 10 V, -800 mV
双极晶体管阵列, 双路, NPN, PNP, 40 V, 200 mW, 600 mA, 100 hFE, SOT-363
(EN)
