TEXAS INSTRUMENTS

晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, 电源沟槽, 双N沟道, 201 A, 30 V, 0.00077 ohm, 10 V, 1.5 V

LITTELFUSE

Thyristor, 200 V, 200 μA, 250 mA, SOT-23, 3 Pins

DIODES INC.

肖特基整流器, 100 V, 1 A, 单, SOD-123F, 2 引脚, 770 mV

NEXPERIA

单晶体管 双极, PNP, -150 V, 115 MHz, 300 mW, -1 A, 220 hFE

VISHAY

双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V

ON SEMICONDUCTOR

肖特基整流器, 30 V, 500 mA, 单, SOD-123, 2 引脚, 430 mV

VISHAY

晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0035 ohm, -10 V, -400 mV

NEXPERIA

二极管阵列 齐纳, AEC-Q101, 100 V, 双共阳极, 300 mW, -55 °C, 150 °C, SOD-323

DIODES INC.

单晶体管 双极, PNP, 30 V, 80 MHz, 3 W, 7 A, 200 hFE

STMICROELECTRONICS

肖特基整流器, 40 V, 2 A, 单, SOD-123FL, 2 引脚, 630 mV

INFINEON

晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V

VISHAY

场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V

STMICROELECTRONICS

晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V

TAIWAN SEMICONDUCTOR

快速/超快功率二极管, 1 kV, 1 A, 单, 1.7 V, 75 ns, 30 A

VISHAY

场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3

DIODES INC.

双路场效应管, MOSFET, 双N沟道, 2 A, 20 V, 0.08 ohm, 4.5 V, 1 V

NEXPERIA

晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00085 ohm, 10 V, 1.41 V

ON SEMICONDUCTOR/FAIRCHILD

双路场效应管, MOSFET, N和P沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V

ON SEMICONDUCTOR/FAIRCHILD

晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V

TEXAS INSTRUMENTS

双路场效应管, MOSFET, 双N沟道, 15 A, 30 V, 0.0119 ohm, 8 V, 950 mV

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V

DIODES INC.

晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V