TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -20 A, -20 V, 0.0199 ohm, -4.5 V, -850 mV
DIODES INC.
双路场效应管, MOSFET, AEC-Q101, N和P, 1.03 A, 20 V, 0.3 ohm, 5 V, 900 mV
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
VISHAY
桥式整流器, 单相, 35A, 600V, ISOCINK+系列, PB
单晶体管 双极, PNP, 60 V, 120 MHz, 3 W, -5 A, 200 hFE
ROHM
肖特基整流器, 40 V, 1 A, 单, SOD-323HE, 2 引脚, 550 mV
MULTICOMP
齐纳二极管, 3.3V, 350mW, SOT-23
ON SEMICONDUCTOR
Dual MOSFET, N and P Channel, 2.6 A, 30 V, 52 mohm, 4.5 V, 900 mV
达林顿双极晶体管
场效应管, MOSFET, N沟道, 150V, 1.5A, TSOP
NEXPERIA
双极晶体管阵列, NPN, 60 V, 420 mW, 1 A, 500 hFE, SOT-457
晶体管, MOSFET, N沟道, 17 A, 55 V, 75 mohm, 10 V, 4 V
单晶体管 双极, NPN, 20 V, 215 MHz, 1.25 W, 4.5 A, 450 hFE
小信号肖特基二极管, 双系列, 30 V, 200 mA, 800 mV, 600 mA, 150 °C
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
射频双极性晶体管
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V
标准二极管, 1.5A, 50V, DO-214AA
场效应管, MOSFET, N沟道
TOSHIBA
晶体管, MOSFET, AEC-Q101, P沟道, -8 A, -60 V, 0.08 ohm, -10 V, -3 V
TAIWAN SEMICONDUCTOR
肖特基整流器, 2A, 60V, DO-214AA
肖特基整流器, 1A 60V DO-213AB
场效应管, MOSFET, P沟道, 60V V(BR)DSS
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV
单晶体管 双极, NPN, 400 V, 25 MHz, 730 mW, 1 A, 155 hFE
(EN)
