STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 13 ohm, 10 V, 3.75 V
单晶体管 双极, PNP, 30 V, 15 W, -10 A, 200 hFE
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
ON SEMICONDUCTOR
快速/超快二极管, 200 V, 2 A, 单, 950 mV, 25 ns, 40 A
DIODES INC.
晶体管, MOSFET, 双N沟道, 7.5 A, 40 V, 0.015 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 35V, SOIC
LITTELFUSE
三端双向可控硅, 600 V, 5 mA, 2 W, 1.3 V, TO-252, 40 A
达林顿晶体管, NPN, 100V, TO-225
IGBT Single Transistor, 20 A, 125 W, 440 V, TO-252, 3 Pins
双路场效应管, MOSFET, P沟道, -5.2 A, -60 V, 0.034 ohm, -10 V, -3 V
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 5 V, 2 V
晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
单晶体管 双极, 达林顿, NPN, 100 V, 25 MHz, 1.75 W, 2 A, 12000 hFE
三端双向可控硅, 600 V, 5 mA, 1 W, 1.3 V, TO-252, 30 A
MOSFET, DUAL P CHANNEL, -20V, 0.0275OHM, -8A, SOIC-8
TAIWAN SEMICONDUCTOR
快速/超快功率二极管, 600 V, 2 A, 单, 1.7 V, 35 ns, 50 A
INFINEON
晶体管, MOSFET, N沟道, 37 A, 55 V, 0.027 ohm, 10 V, 4 V
晶闸管, 600 V, 75 μA, 2.6 A, 4 A, TO-252, 3 引脚
Power MOSFET, N Channel, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
肖特基整流器, 100 V, 2 A, 单, DO-214AA, 2 引脚, 850 mV
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
单晶体管 双极, NPN, 25 V, 65 MHz, 12.5 W, 5 A, 70 hFE
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3
(EN)
