NEXPERIA
单晶体管 双极, NPN, 300 V, 1.2 W, 100 mA, 40 hFE
ROHM
肖特基整流器, 150 V, 1 A, 单, SOD-123FL, 2 引脚, 840 mV
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.05 ohm, 10 V, 2.5 V
WOLFSPEED
场效应管, MOSFET, N沟道, 1.7KV, 4.9A, TO-247-3
DIODES INC.
晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V
ON SEMICONDUCTOR
单晶体管 双极, 通用, NPN, 250 V, 8 MHz, 250 W, 40 A, 8 hFE
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.0161 ohm, -4.5 V, -1.2 V
LITTELFUSE
晶闸管, 600 V, 40 mA, 16 A, 25 A, TO-220AB, 3 引脚
单晶体管 双极, PNP, 20 V, 120 MHz, 500 mW, 4 A, 82 hFE
TAIWAN SEMICONDUCTOR
快速/超快二极管, 200 V, 4 A, 单, 1.35 V, 60 ns, 150 A
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
晶体管, MOSFET, N沟道, 2.6 A, 52 V, 0.095 ohm, 10 V, 1.5 V
快速/超快二极管, 100 V, 500 mA, 单, 980 mV, 25 ns, 6 A
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.048 ohm, -4.5 V, -1 V
STMICROELECTRONICS
Schottky Rectifier, High Voltage/Power, 100 V, 40 A, Dual Independent, ISOTOP, 4 Pins, 650 mV
双路场效应管, MOSFET, N和P沟道, 100 mA, 20 V, 2.5 ohm, 4.5 V, 1 V
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
单管二极管 齐纳, 18 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
INFINEON
功率场效应管, MOSFET, N沟道, 13.8 A, 600 V, 0.252 ohm, 10 V, 4 V
三端双向可控硅, 600 V, 80 mA, 20 W, 1.3 V, TO-220AB, 208 A
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 3 V
单管二极管 齐纳, 75 V, 500 mW, SOD-80 (迷你MELF), 5 %, 2 引脚, 175 °C
晶体管, MOSFET, N沟道, 210 A, 60 V, 3 mohm, 10 V, 4 V
(EN)
