ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V
MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
BROADCOM LIMITED
晶体管 双极-射频, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150 hFE
晶体管, 射频FET, 5.5 V, 65 mA, 725 mW, 450 MHz, 10 GHz, SOT-343
晶体管, 射频FET, 高线性度, 7 V, 300 mA, 1 W, 50 MHz, 6 GHz, SOT-89
晶体管, 射频FET, 5 V, 120 mA, 725 mW, 450 MHz, 6 GHz, SOT-343
晶体管, 射频FET, 5 V, 100 mA, 270 mW, 450 MHz, 6 GHz, SOT-343
晶体管, 射频FET, 硅, 3 V, 500 mA, 500 mW, 450 MHz, 6 GHz, SOT-343
INFINEON
场效应管, MOSFET, N沟道, 车用, 24V, 240A, TO-262
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.5 mohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 240 A, 40 V, 1.5 mohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0039 ohm, 10 V, 2 V
场效应管, MOSFET, N沟道, 车用, 30V, 160A, TO-220AB
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.082 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -2 V
晶体管, MOSFET, P沟道, -5.4 A, -20 V, 0.1 ohm, -2.7 V, -700 mV
双路场效应管, MOSFET, 双P沟道, -4.3 A, -20 V, 0.09 ohm, -4.5 V, -700 mV
双路场效应管, MOSFET, 双P沟道, -4.9 A, -30 V, 0.042 ohm, -10 V, -1 V
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)
