INFINEON
晶体管, IGBT阵列&模块, N沟道, 105 A, 3 V, 625 W, 1.2 kV, Module
NEXPERIA
晶体管, MOSFET, N沟道, 173 mA, 50 V, 2.8 ohm, 10 V, 1 V
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.02 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 150 mA, 100 V, 5 ohm, 5 V, 2 V
晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 120 mA, 240 V, 20 ohm, 10 V, -1.4 V
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
NXP
场效应管, N沟道, DMOS FET, 300V, 350mA, 3-SOT-223
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
晶体管, MOSFET, N沟道, 480 mA, 200 V, 3.5 ohm, 10 V, -1.4 V
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
ON SEMICONDUCTOR
单晶体管 双极, PNP, -300 V, 15 MHz, 1.5 W, -100 mA, 30 hFE
晶体管, MOSFET, P沟道, -1.9 A, -60 V, 0.239 ohm, -10 V, -3 V
(EN)
