
ON SEMICONDUCTOR/FAIRCHILD
触发二极管, DIAC / SIDAC, 触发二极管, 30 V, 34 V, 15 μA, 2 A, DO-204AH, 2 引脚

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 20mA, 30V, SO

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 20mA, 30V, SO

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 70mA, 30V, SO

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 100mA, 30V, S

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 20mA, 30V, SM

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 130mA, 30V, S

PANASONIC ELECTRONIC COMPONENTS
DIODE, ULTRAFAST RECOVERY, 20mA, 30V, SO

DIODES INC.
单晶体管 双极, PNP, 40 V, 150 MHz, 1.2 W, 500 mA, 220 hFE

DIODES INC.
单晶体管 双极, NPN, 40 V, 105 MHz, 1.2 W, 500 mA, 220 hFE

DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 540 mA, 20 V, 0.4 ohm, 4.5 V, 500 mV

DIODES INC.
双路场效应管, MOSFET, N和P沟道, 5.5 A, 30 V, 0.028 ohm, 10 V, 1 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V

DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV