DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 10 A, 30 V, 0.0134 ohm, 10 V, 1 V
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
双极晶体管阵列, 双路, NPN, 40 V, 200 mW, 200 mA, 100 hFE, SOT-363
双极晶体管阵列, 双路, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
双极晶体管阵列, PNP, -150 V, 300 mW, -200 mA, 60 hFE, SOT-26
双极晶体管阵列, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
双极晶体管阵列, 双路, NPN, 160 V, 300 mW, 200 mA, 80 hFE, SOT-26
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
晶体管, MOSFET, 增强模式, N沟道, 16 A, 30 V, 0.005 ohm, 10 V, 1.3 V
双路场效应管, MOSFET, 双N沟道, 21 A, 30 V, 0.0095 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 6.9 A, 30 V, 0.022 ohm, 10 V, 1 V
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.04 ohm, 4.5 V, 500 mV
晶体管, MOSFET, 增强模式, N沟道, 2 A, 30 V, 0.1 ohm, 4.5 V, 500 mV
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
双路场效应管, MOSFET, 双N沟道, 305 mA, 50 V, 2 ohm, 5 V, 1 V
晶体管, MOSFET, N沟道, 300 mA, 50 V, 2 ohm, 5 V, 1 V
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V
(EN)
