ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 350 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
晶体管, MOSFET, P沟道, -350 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V
晶体管, MOSFET, P沟道, -830 mA, -20 V, 0.28 ohm, -4.5 V, -700 mV
双路场效应管, MOSFET, 双P沟道, 350 mA, -20 V, 1.2 ohm, -4.5 V, -1.03 V
双路场效应管, MOSFET, 双N沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 1 V
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.24 ohm, 4.5 V, 1 V
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 1.5 V
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 700 mohm, 4.5 V, 600 mV
场效应管, MOSFET, N沟道, -20V, -3A, WL-CSP
场效应管, MOSFET, P沟道, 20V, 3A, 8-WLCSP
场效应管, MOSFET, P沟道, -3.7A, -20V
INFINEON
晶体管, IGBT阵列&模块, 双NPN, 250 A, 1.95 V, 1.1 kW, 1.7 kV, Module
晶体管, IGBT阵列&模块, 双NPN, 310 A, 1.95 V, 1.25 kW, 1.7 kV, Module
晶体管, IGBT阵列&模块, 双NPN, 450 A, 1.75 V, 1.6 kW, 1.2 kV, Module
晶体管, IGBT阵列&模块, 双NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
晶体管, IGBT阵列&模块, N沟道, 650 A, 2 V, 4.15 kW, 1.7 kV, Module
晶体管, IGBT阵列&模块, N沟道, 900 A, 1.75 V, 5.1 kW, 1.2 kV, Module
双极晶体管阵列, NPN, 40 V, 300 mW, 500 mA, 300 hFE, SC-70
双极晶体管阵列, NPN, PNP, 30 V, 300 mW, 500 mA, 100 hFE, SC-70
双极晶体管
双极晶体管阵列, NPN, 40 V, 300 mW, 200 mA, 40 hFE, SC-70
双极晶体管阵列, NPN, PNP, 40 V, 300 mW, 200 mA, 100 hFE, SC-70
单晶体管, IGBT, 通用, 20 A, 600 V, 208 W, 600 V, TO-263, 3 引脚
(EN)
