DIODES INC.
单晶体管 双极, 达林顿, NPN, 40 V, 330 mW, 300 mA, 20000 hFE
单晶体管 双极, NPN, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE
单晶体管 双极, PNP, 300 V, 50 MHz, 330 mW, 200 mA, 40 hFE
FUJI ELECTRIC
功率场效应管, MOSFET, N沟道, 68 A, 600 V, 0.034 ohm, 10 V, 3 V
ROHM
双极晶体管阵列, NPN, PNP, 50 V, 300 mW, 150 mA, 120 hFE, SC-74A
INFINEON
晶体管, IGBT阵列&模块, N沟道, 15 A, 1.85 V, 130 W, 1.2 kV, Module
晶体管, IGBT阵列&模块, N沟道, 30 A, 1.55 V, 115 W, 600 V, Module
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, IPM, 250W, 36A, 650V
功率场效应管, MOSFET, N沟道, 12.6 A, 800 V, 0.58 ohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 65 A, 200 V, 32 mohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
晶体管, MOSFET, P沟道, -22 A, -100 V, 96 mohm, -10 V, -4 V
晶体管, MOSFET, P沟道, -27 A, -60 V, 0.055 ohm, -10 V, -4 V
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.027 ohm, 10 V, 2.5 V
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.039 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.04 ohm, 10 V, 4 V
晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
晶体管, MOSFET, P沟道, 47 A, -60 V, 26 mohm, -10 V, -4 V
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 2.8 ohm, 10 V, 5 V
场效应管, MOSFET, N沟道, 100V, 55mA
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.021 ohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.14 ohm, 10 V, 4 V
(EN)
