ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 2.1 ohm, 10 V, 5 V
晶体管, MOSFET, N沟道, 11.8 A, 200 V, 150 mohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 4 A, 900 V, 3.5 ohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 5.5 A, 800 V, 2.5 ohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 8 A, 900 V, 1.12 ohm, 10 V, 3 V
双路场效应管, MOSFET, 双N沟道, 450 mA, 400 V, 3.2 ohm, 10 V, 4 V
双路场效应管, MOSFET, 双N沟道, 370 mA, 500 V, 6.2 ohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.088 ohm, 10 V, 2.5 V
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.11 ohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V
晶体管, MOSFET, P沟道, -1 A, -100 V, 820 mohm, -10 V, -4 V
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 275 mohm, 10 V, 2 V
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V
INFINEON
晶体管, IGBT阵列&模块, N沟道, 150 A, 1.75 V, 680 W, 1.2 kV, Module
晶体管, IGBT阵列&模块, N沟道, 200 A, 1.75 V, 1 kW, 1.2 kV, Module
晶体管, IGBT阵列&模块, N沟道, 20 A, 1.55 V, 135 W, 600 V, Module
晶体管, IGBT阵列&模块, 低功率, N沟道, 30 A, 1.55 V, 150 W, 600 V, Module
晶体管, IGBT阵列&模块, N沟道, 50 A, 1.85 V, 335 W, 1.2 kV, Module
智能电源模块, 3相, 500V, 3A, 电路板安装
单晶体管 双极, PNP, -60 V, 75 MHz, 500 mW, -2 A, 40 hFE
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 700 mA, 450 V, 9.3 ohm, 10 V, 4.5 V
DIODES INC.
单晶体管 双极, NPN, 30 V, 180 MHz, 2.5 W, 5 A, 450 hFE
(EN)
