INFINEON
晶体管, MOSFET, N沟道, 8.3 A, 100 V, 18 mohm, 10 V, 4.9 V
晶体管, MOSFET, N沟道, 10 A, 80 V, 13.4 mohm, 10 V, 4.9 V
双路场效应管, MOSFET, 双N沟道, 8.9 A, 30 V, 0.0174 ohm, 10 V, 1.8 V
双路场效应管, MOSFET, 双N沟道, 10 A, 12 V, 15 mohm, 4.5 V, 2 V
场效应管, MOSFET 晶体管
VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4.5 V
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.002 ohm, 10 V, 1.8 V
双路场效应管, MOSFET, 双N沟道, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 15.5 mohm, 10 V, 1.8 V
场效应管, MOSFET, 双N沟道, 30V, 8A, SOIC
场效应管, MOSFET
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.5 mohm, 10 V, 2.35 V
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
双路场效应管, MOSFET, 双N沟道, 10 A, 20 V, 13.4 mohm, 10 V, 2.55 V
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 11A, TO-204AA
晶体管, MOSFET, P沟道, 11 A, -100 V, 300 mohm, -10 V, -4 V
晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
场效应管, P通道, MOSFET, -30V, -20A, SOIC, 整卷
场效应管, MOSFET, P沟道, -30V, -15A, SOIC
场效应管, MOSFET, P沟道, -30V, 0.0136Ω, -9.8A, SOIC-8
场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
晶体管, MOSFET, P沟道, -8 A, -30 V, 17 mohm, -10 V, -1.8 V
(EN)
