INFINEON
电源模块, 500V, 3A, 36QFN
电源模块, 500V, 4A, 37QFN
ON SEMICONDUCTOR/FAIRCHILD
单晶体管, IGBT, 21 A, 1.9 V, 150 W, 400 V, TO-252AA, 3 引脚
单晶体管, IGBT, 21 A, 1.25 V, 150 W, 400 V, TO-263AB, 3 引脚
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-220AB, 3 引脚
单晶体管, IGBT, 46 A, 1.17 V, 250 W, 360 V, TO-263AB, 3 引脚
IXYS SEMICONDUCTOR
单晶体管, IGBT, 20 A, 2.1 V, 85 W, 1.2 kV, TO-247AD, 3 引脚
单晶体管, IGBT, 78 A, 2.1 V, 325 W, 1.2 kV, TO-247AD, 3 引脚
单晶体管, IGBT, 9 A, 1.8 V, 45 W, 1.2 kV, TO-268AA, 3 引脚
单晶体管, IGBT, 隔离, 50 A, 2.4 V, 200 W, 1.2 kV, TO-247AD, 3 引脚
功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
IXYS RF
晶体管, 射频FET, 500 V, 12 A, 180 W, 500 kHz, TO-247AD
功率场效应管, MOSFET, N沟道, 15 A, 800 V, 600 mohm, 10 V, 4.5 V
晶体管, MOSFET, 极性FET, N沟道, 170 A, 100 V, 9 mohm, 15 V, 5 V
晶体管, 射频FET, 500 V, 21 A, 300 W, 500 kHz, TO-247AD
晶体管, MOSFET, HiPerFET, N沟道, 30 A, 500 V, 160 mohm, 10 V, 4 V
晶体管, MOSFET, N沟道, 50 A, 200 V, 45 mohm, 10 V, 4 V
晶体管, 射频FET, 1 kV, 6 A, 180 W, 500 kHz, TO-247AD
晶体管, MOSFET, 极性FET, N沟道, 180 A, 150 V, 11 mohm, 10 V, 5 V
晶体管, 射频FET, 1 kV, 21 A, 500 W, 500 kHz, TO-264
功率场效应管, MOSFET, N沟道, 30 A, 1 kV, 400 mohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 32 A, 800 V, 270 mohm, 10 V, 5 V
功率场效应管, MOSFET, N沟道, 48 A, 600 V, 135 mohm, 10 V, 5 V
(EN)
