STMICROELECTRONICS
单晶体管 双极, NPN, 100 V, 65 W, 6 A, 75 hFE
ON SEMICONDUCTOR
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 460 mW, -500 mA, 40 hFE
INFINEON
晶体管, MOSFET, P沟道, -600 mA, -30 V, 600 mohm, -10 V, -1 V
齐纳二极管, VZ:36V
晶体管 双极-射频, AEC-Q101, NPN, 12 V, 8 GHz, 175 mW, 20 mA, 100 hFE
晶体管 双极预偏置/数字, AEC-Q100, 双路 PNP, -50 V, -100 mA, 10 kohm, 10 kohm, 1 电阻比率
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -7 A, -30 V, 23 mohm, -10 V, -1.6 V
NEXPERIA
晶体管 双极预偏置/数字, BRT, 单路PNP, -50 V, -100 mA, 4.7 kohm, 4.7 kohm, 1 电阻比率
二极管 小信号, 单, 100 V, 200 mA, 1250 mV, 6 ns, 500 mA
ROHM
晶体管 双极预偏置/数字, AEC-Q101, 单路NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 电阻比率
场效应管, JFET, N沟道, -25V, SOT-23
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
DIODES INC.
单晶体管 双极, NPN, 45 V, 100 MHz, 150 mW, 100 mA, 110 hFE
VISHAY
齐纳二极管, 500mW, 18V, DO-35
Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 225 mW, -500 mA, 40 hFE
晶体管, MOSFET, P沟道, 610 mA, -30 V, 600 mohm, -10 V, -1 V
MULTICOMP
单晶体管 双极, 通用, NPN, 45 V, 200 MHz, 800 mW, 1 A, 100 hFE
单晶体管 双极, 通用, NPN, 65 V, 100 MHz, 200 mW, 100 mA, 200 hFE
双极性晶体管, PNP -80V SOT-23
晶体管, MOSFET, P沟道, 7.3 A, -30 V, 0.026 ohm, -10 V, 1.5 V
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.18 ohm, 5 V, 1.5 V
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 140 mohm, -4.5 V, -1 V
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.078 ohm, 10 V, 2.5 V
肖特基整流二极管, 200mA, 20V, MICROMELF
(EN)
