NEXPERIA
晶体管, MOSFET, P沟道, -410 mA, -30 V, 1.2 ohm, -4.5 V, -700 mV
晶体管, MOSFET, N沟道, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.21 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 200 mA, 20 V, 0.25 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
晶体管, MOSFET, P沟道, -1 A, -30 V, 0.43 ohm, -4.5 V, -700 mV
晶体管, MOSFET, N沟道, 200 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 1 A, 20 V, 0.29 ohm, 4.5 V, 700 mV
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.37 ohm, 4.5 V, 770 mV
BOURNS
设计套件, 以太网电涌保护
设计套件, 以太网 浪涌保护
ON SEMICONDUCTOR
双极性晶体管
ON SEMICONDUCTOR/FAIRCHILD
晶体管, JFET, JFET, 30 V, 5 mA, 30 mA, 3 V, TO-92, JFET
晶体管 双极预偏置/数字, AEC-Q101, NPN和PNP执行, 50 V, 100 mA, 47 kohm, 47 kohm, 1 电阻比率
(EN)
