SEMISOUTH
Silicon Carbide Schottky Diode, Single, 1.2 kV, 30 A, 13 nC, TO-247
ON SEMICONDUCTOR/FAIRCHILD
晶体管, IGBT, 1.5KV, 10A
INFINEON
单晶体管, IGBT, 31 A, 2 V, 139 W, 600 V, TO-247, 3 引脚
单晶体管, IGBT, 46 A, 3.1 V, 313 W, 1.2 kV, TO-247, 3 引脚
单晶体管, IGBT, 41 A, 2.4 V, 250 W, 600 V, TO-247AC, 3 引脚
单晶体管, IGBT, 通用, 41 A, 3.15 V, 250 W, 600 V, TO-247, 3 引脚
VISHAY
晶体管, MOSFET, N沟道, 630 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV
场效应管, MOSFET, N沟道, 20V, 500mA, SC-89
双路场效应管, MOSFET, N和P沟道, 600 mA, 20 V, 0.33 ohm, 4.5 V, 400 mV
场效应管, MOSFET, P通道, -60V, 190MA, SC-75A, 整卷
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
场效应管, MOSFET, P通道, -60V, -500MA, SC-89, 整卷
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
晶体管, MOSFET, P沟道, 140 mA, -20 V, 20 ohm, -4.5 V, -1.2 V
场效应管, MOSFET, N通道, 20V, 200MA, SC-89, 整卷
晶体管, MOSFET, P沟道, -960 mA, -30 V, 0.139 ohm, -10 V, -1.45 V
晶体管, MOSFET, P沟道, -1.75 A, -20 V, 0.065 ohm, -4.5 V, -1 V
晶体管, MOSFET, N沟道, 400 mA, 20 V, 0.65 ohm, 4.5 V, 1 V
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
晶体管, MOSFET, P沟道, -670 mA, -20 V, 0.36 ohm, -4.5 V, -1.4 V
场效应管, MOSFET, N沟道, 30V, 900mA, SC-70
晶体管, MOSFET, P沟道, -900 mA, -8 V, 0.28 ohm, -4.5 V, -400 mV
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.125 ohm, -4.5 V, 450 mV
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)
